2.5Gbps InGaAs APD Photodiode Chip
Front-illuminated planar bare chip structure with non-coplanar P/N electrodes, offering high bandwidth, high responsivity, and high reliability.
- Features: 50μm active area, high responsivity, low dark current, 2.5GHz bandwidth.
- Applications: Fiber optic communications; OTDR instruments/modules; ONUs, scanning imagers.
Technical Specification:
| Model：0VQT-CA50 | ||||||
| Technical Spec. | Symbol | Test Conditions | Min | Std. | Max | Unit |
| Responsivity | Re | 1550nm,M=1 | 0.9 | 1.0 | A/W | |
| 1310nm,M=1 | 0.8 | |||||
| Multiplication factor | M | VR=VB-3V | 10 | / | ||
| Maximum Gain | Mmax | V=Ve-1V | 20 | / | ||
| Reverse breakdown voltage | VR | lr=10μA, no illumination | 36 | 55 | V | |
| Dark Current | Io | VR=VBr-3V | 10 | nA | ||
| Capacitance | C | Vs-3V f=1MHz | 0.5 | pF | ||
| -3dB Bandwidth | f3dB | M=10 | 2.5 | 3.0 | GHz | |
| Temperature coefficient of breakdown voltage | η | -40℃~+20℃,I=10μA | 0.13 | 0.17 | V/℃ | |
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current | ESD Sensitivity |
| -40°C to +85°C | -50°C to +100°C | 5mA | 3mA | ≥ 300V |
Reliability: Complies with Telcordia GR-468-CORE.
10Gbps InGaAs APD Photodiode Chip
The 10Gbps APD chip features a front-illuminated mesa structure with a photosensitive area diameter of 40 µm. It offers high bandwidth, high responsivity, and high reliability, meeting the requirements for 10Gbps data communication rates.
- Feature: High-bandwidth, high-sensitivity; P-N junction with planar electrodes; High reliability
- Applications: 10Gbps transceivers; 10G PON; 5G Fronthaul.
Technical Specification:
| Model：OVQT-CA40 | ||||||
| Technical Spec. | Symbol | Test Conditions | Min | Std. | Max | Unit |
| Reverse breakdown voltage | VgR | lp=10μA, no illumination | 28 | 37 | 41 | V |
| Dark Current | lo | VR=V BR-3V | 10 | 20 | nA | |
| 3dB Bandwidth | f₃dB | M=10 | 6 | 7 | GHz | |
| M=3 | 5 | 8 | GHz | |||
| Responsivity | Re | 1550nm,1μW,M=1 | 0.75 | 0.8 | A/W | |
| Photocurrent gain | M | 1550nm,lμw,VBR-3V | 9 | 10 | ||
| Temperature coefficient of breakdown voltage | η | 40℃~+85℃,Ig=10μA | – | 0.03 | V/℃ | |
| Capacitance | C | VR=0.9VgR | 0.24 | 0.30 | pF | |
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current | ESD Sensitivity |
| -40°C to +85°C | -50°C to +100°C | 3mA | 5mA | ≥ 250V |
Reliability: Complies with Telcordia GR-468-CORE.
25Gbps InGaAs APD Photodiode Chip
The 25Gbps APD chip features a front-illuminated mesa structure with a photosensitive area diameter of 16 µm. It offers high bandwidth, high responsivity, and high reliability, meeting the requirements for 25Gbps data communication rates.
- Feature: High-bandwidth, high-sensitivity; P-N junction with planar electrodes; High reliability
- Applications: 25Gbps transceivers; 25G PON/25G ER; 5G Fronthaul.
Technical Specification:
| Model：0VQT-CA16 | ||||||
| Technical Spec. | Symbol | Test Conditions | Min | Std. | Max | Unit |
| Reverse breakdown voltage | VBR | IR=10μA,无光照 | 20 | 27 | 29 | V |
| Dark Current | lp | VR=0.9VBR | 20 | 50 | nA | |
| 3dB Bandwidth | f₃dB | VR=Vgg-2V | 16 | GHz | ||
| Responsivity | Re | 1550nm,1μW,M=1 | 0.70 | 0.80 | A/W | |
| Photocurrent gain | M | VR=Vgr-2V | 6 | |||
| Temperature coefficient of breakdown voltage | n | 40℃~+85℃,Ig=10μA, | 0.03 | V/℃ | ||
| Capacitance | C | VR=0.9VBR | 0.10 | pF | ||
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current |
| -40°C to +85°C | -50°C to +100°C | 2mA | 2mA |
Reliability: Complies with Telcordia GR-468-CORE.
25Gbps InGaAs PIN Photodiode Chip
The 25Gbps PIN chip features top-side illumination with an optical aperture of 20 μm. It offers high bandwidth, high responsivity, and high reliability, meeting the requirements for 25Gbps data communication rates.
- Feature: High-bandwidth, high-sensitivity; P-N junction with planar electrodes; High reliability
- Applications: 25Gbps transceivers; 25G Ethernet/SONET
Technical Specification:
| Model：0VQT-CP20 | ||||||
| Technical Spec. | Symbol | Test Conditions | Min | Std. | Max | Unit |
| Reverse breakdown voltage | VBR | Ir=10μA,无光照 | 15 | – | V | |
| Dark Current | lo | VR=5V | 1 | 5 | nA | |
| 3dB Bandwidth | f₃de | VR=-5V | 18 | – | GHz | |
| Responsivity | R。 | 1550nm,1μW,M=1 | 0.7 | 0.75 | A/W | |
| Capacitance | C | VR=-5V | 0.10 | pF | ||
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current |
| -40°C to +85°C | -50°C to +100°C | 2mA | 2mA |
Reliability: Complies with Telcordia GR-468-CORE.