Large-Active-Area InGaAs APD Chip Series
This series of high-performance, front-illuminated, planar-structure InGaAs APD (avalanche photodiode) chips features high responsivity, high gain, low dark current, low noise, and high reliability. They are well-suited for applications such as eye-safe LiDAR. The products are available as bare dies or in TO packages, with customization services also offered. They meet the reliability requirements of the Telcordia GR-468-CORE standard.
- Features: Spectral response range: 0.9–1.7 μm; Photosensitive area diameter: 50–1000 μm; High responsivity, low dark current; High reliability
- Applications: Eye-safe LiDAR, laser ranging; Optical Time-Domain Reflectometer (OTDR); Free-space optical communication; Instrumentation; Fiber-optic sensing
Technical Specification:
| Model | OVQT-A50 | OVQT-A80 | OVQT-A200 | OVQT-A500 | OVQT-A1000 | |||||||||||||
| Parameter | Symbol | Unit | Test Conditions | Min | Std. | Max | Min | Std. | Max | Min | Std. | Max | Min | Std. | Max | Min | Std. | Max |
| Diameter of the photosensitive area | φ | m | 50 | 80 | 200 | 500 | 000 | |||||||||||
| Unity Gain Response | Re | AW | λ=1.55μm, Pm=lμW | 0.95 | 1.05 | 0.95 | 1.05 | 0.95 | 1.05 | 0.95 | .05 | 0.95 | 1.05 | |||||
| Gain | M | Vg-Va-3V | 10 | 13 | 10 | 13 | 10 | 13 | 10 | 13 | 10 | 13 | ||||||
| Max. Gain | Mmax | V=Vp-1V | 20 | 35 | 20 | 35 | 20 | 35 | 20 | 35 | 20 | 35 | ||||||
| Dark Current | lo | nA | V=VBQ-3V | 1.5 | 6.0 | 2.5 | 10 | 6.0 | 25 | 15 | 50 | 30 | 100 | |||||
| Temperature coefficient of dark voltage | ATn | .1/c | Vg=Va-3V, 40℃-85℃ | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | ||||||||||
| Capacitance | C | pF | Vg=VBR-3V, f=1MHz | 0.4 | 0.6 | 0.7 | 1.1 | 2.0 | 2.5 | 10 | 15 | 30 | 40 | |||||
| -3dB Bandwidth | fuB | GHz | M=10, R=500 | 2.0 | 2.5 | 1.0 | 18 | 0.4 | 1.4 | 0.3 | ||||||||
| Reverse breakdown voltage | VBR | v | lo=10μA | 30 | 80 | 30 | 80 | 30 | 80 | 30 | 80 | 30 | 80 | |||||
| Temperature coefficient of breakdown voltage | n | v/c | 40to+85℃ | 0.1 | 0.15 | 0.1 | 0.15 | 0.1 | 0.15 | 0.1 | 0.15 | 0.1 | 0.15 | |||||
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current |
| -40°C to +85°C | -55°C to +125°C | 10mA | 2mA |
Reliability: Complies with Telcordia GR-468-CORE.
InGaAs APD linear array detector chip
This series of high-performance, front-illuminated, planar-structure InGaAs APD (avalanche photodiode) chips features high responsivity, high gain, low dark current, low noise, and high reliability. They are well-suited for applications such as eye-safe LiDAR. The products are available as bare dies or in TO packages, with customization services also offered. They comply with the Telcordia GR-468-CORE reliability standards.
- Features: Spectral response range: 0.9–1.7 μm, 430 μm × 150 μm rectangular photosensitive area; High uniformity of optoelectronic characteristics across pixels; small pixel pitch; High responsivity, low dark current, and low noise; Available as bare chips or in TO packages
- Applications: LiDAR; Laser Ranging; Electro-Optical Warning
Technical Specification:
| Model：0VQT-LAA16、0VQT-LAA8 | ||||||
| Parameter | Symbol | Unit | Test Conditions | Min | Std. | Max |
| Diameter of the photosensitive area | φ | μm | 430×150 | |||
| Pixel pitch | 8W | μm | 70 | |||
| Unity-gain responsivity | R | A/W | 1550nm,IμW,M=1 | 0.95 | 1.05 | |
| Responsivity uniformity | △R/R | 1550nm,1pW,VR=VaR-3V | 10% | 30% | ||
| Gain | M | Vg=Ve-3V | 10 | 13 | ||
| Max. Gain | Mm | VR=VgR-1V | 20 | 35 | ||
| Dark Current | lo | nA | Vg=V-3V | 10 | 50 | |
| Crosstalk between adjacent pixels | S | M=10 | 10% | |||
| Capacitance | C | pF | VR=VBR-3V,f=1MHZ | 4.0 | ||
| -3dB Bandwidth | f3aB | GHz | M=10,R [=500 | 0.4 | 0.8 | |
| Reverse breakdown voltage | Vea | V | lo=10μA | 40 | 80 | |
| Breakdown voltage uniformity | △VBR | V | lo=10μA,max[VBg]-min[VBl | 0.5 | 1.0 | |
| Temperature coefficient of breakdown voltage | n | V℃ | 40 to+85℃ | 0.1 | ||
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Current |
| -40°C to +85°C | -55°C to +100°C | 10mA | 2mA |
*Single-element devices with a photosensitive area of 430 μm × 150 μm are available.
Reliability: Complies with Telcordia GR-468-CORE.
Low Capacitance and Large Photosensitive Area InGaAs PIN Photodiode Chips Series
This series of low-capacitance, large-active-area InGaAs PIN photodiode chips features a front-illuminated, planar structure. Available models include circular active areas with diameters of 1 mm, 2 mm, 3 mm, and 5 mm, as well as a rectangular active area measuring 1.5 mm × 6 mm. Certain models are offered in low-capacitance versions. Characterized by high bandwidth, high sensitivity, and high reliability, these photodiodes are well-suited for applications such as optoelectronic warning systems and LiDAR.
- Features: Ultra-low capacitance options available; Active area: 1mm to 5mm; Available as bare chips or in TO packages
- Applications: Optical Alarm; Optical Power Meter; Instruments & Meters
Technical Specification:
| Tech Spec | Symbol | Unit | Type | Model | ||||||||||||||
| OVQT-LC1 | OVQT-LC2 | OVQT-LC3 | OVQT-LC5 | OVQT-LC1.5×6 | ||||||||||||||
| Min | Std. | Max | Min | Std. | Max | Min | Std. | Max | Min | Std. | Max | Min | Std. | Max | ||||
| Diameter of the photosensitive area | φ | mm | Std. | φ1 | φ2 | φ3 | φ5 | 1.5×6 | ||||||||||
| Low Cap. | ||||||||||||||||||
| Response Time* | t | ns | Std. | 5 | 17 | 35 | 117 | 45 | ||||||||||
| Low Cap. | 2 | 9 | 17 | 22 | ||||||||||||||
| -3dB Bandwidth | f₃dB | MHz | Std. | 75 | 20 | 10 | 3 | 10 | ||||||||||
| Low Cap. | 150 | 40 | 20 | 7 | 20 | |||||||||||||
| Capacitance | Cvo | pF | Std. | 40@1V | 130@1V | 300@1V | 850@1V | 1100@1V | ||||||||||
| Low Cap. | 25@1V | 70@1V | 180@1V | 400@1V | 520@1V | |||||||||||||
| Cv | Std. | 30@5V | 100@5V | 200@5V | 750@2V | 960@2V | ||||||||||||
| Low Cap. | 15@5V | 50 @5V | 100@5V | 300@2V | 380@2V | |||||||||||||
| Cv | Std. | 20@25V | 75@25V | 170@25V | 600@5V | 770@5V | ||||||||||||
| Low Cap. | 10@25V | 35@25V | 90@25V | 200@5V | 260@5V | |||||||||||||
| Reverse breakdown voltage | VBR | V | Std. | 20 | 15 | 10 | 10 | 10 | ||||||||||
| Low Cap. | 10 | 10 | 10 | 10 | 10 | |||||||||||||
| Dark Current | lo | nA | Std. | 1 | 2 | 5 | 20 | 30 | ||||||||||
| Low Cap. | 3 | 6 | 15 | 60 | 100 | |||||||||||||
Absolute Maximum Ratings:
| Average forward current | Total power dissipation | Average photocurrent | Storage Temperature | Working Temperature | Soldering temperature |
| 100mA | 100mW | 100mA | -60°C to +125°C | -40°C to +85°C | 260°C |
| Tech. Spec | Symbol | Min | Std. | Max | Unit |
| Working Voltage | Vop | 0 | 5 | VBR-5 | V |
| Spectral range | △λ | 900 | 1700 | nm | |
| Responsivity | R₁064 | 0.60 | 0.65 | A/W | |
| R₁550 | 0.95 | 1.05 | A/W |
Reliability: Complies with Telcordia GR-468-CORE.
Large-Active-Area InGaAs APD Device Series
This series of high-performance, front-illuminated planar InGaAs APD (avalanche photodiode) chips features high responsivity, high gain, low dark current, low noise, and high reliability. They are suitable for applications such as eye-safe LiDAR. The products are available as bare dies or in TO packages, and custom development services are also offered.
- Features: Spectral response range: 0.9–1.7 μm; Photosensitive area diameter: 50 μm, 80 μm, 200 μm, 500 μm, 1000 μm; High responsivity, low dark current; High reliability
- Applications: Eye-safe LiDAR, laser ranging; Optical Time-Domain Reflectometer (OTDR); Free-space optical communication
Technical Specification:
| Model | LA200 | LA500 | |||||||
| Tech Spec. | Symbol | Unit | Test Condition | Min | Std. | Max | Min | Std. | Max |
| Diameter of the photosensitive area | φ | μm | |||||||
| Unity-gain responsivity | R | AW | λ=1.55μm,Pin=1pW | 0.95 | 1.05 | 0.95 | 1.05 | ||
| Gain | M | VR=VBR-3V | 10 | 13 | 10 | 13 | |||
| Maximum Gain | Mmax | VR=VBR-IV | 20 | 35 | 20 | 35 | |||
| Dark Current | ID | nA | VR=VBR-3V | 6 | 25 | 15 | 50 | ||
| Dark current temperature coefficient | △TID | times/c | VR=VBR-3V | 1.1 | 1. | ||||
| Capacitance | Ct | pF | VR=VBR-3V,f=1MHz | 2.0 | 2.5 | 10 | 15 | ||
| -3dB Cut-off frequency | C | GHz | M=10,RL=500 | 0.4 | 1.4 | 0.4 | 0.3 | ||
| Breakdown voltage | VBR | v | ID=10μA | 30 | 80 | 30 | 80 | ||
| Temperature coefficient of breakdown voltage | n | v/C | 40 to+85℃ | 0.1 | 0.15 | 0.1 | 0.15 | ||
Absolute Maximum Ratings:
| Storage Temperature | Working Temperature | DC reverse bias voltage | Input optical power density (10 ns pulsed light), Φe | Revers Current | Forward Current | ESD |
| -45℃-+125℃ | -45℃~+85℃ | VBR | 200kW/cm² | 2mA | 10mA | ≥300V |
Reliability: The product complies with the relevant requirements of GJB 8119-2013, “General Specification for Semiconductor Optoelectronic Devices.”
InGaAs APD quadrant photodetector
The InGaAs APD quadrant photodetector is a high-performance, near-infrared optical position detector with a spectral response range of 0.9–1.7 μm. It features high detection sensitivity, high spatial resolution, and fast response speed. It is widely used in applications such as alignment detection, precision displacement measurement, vibration detection, angle measurement, and guidance systems. The detector is housed in a TO-39 package.
- Features: Front-illuminated planar structure; Small quadrant spacing, low crosstalk; Low dark current; High reliability
- Applications: Eye-safe laser guidance, collimation, navigation, etc.; Free-space optical communication; Industrial control applications such as precision machining
Technical Specification:
| Tech Spec | Symbol | Unit | Test Condition | Min | Std | Max |
| Diameter of the photosensitive area | φ | μm | 1000 | |||
| Quadrant spacing | d | μm | 100 | |||
| Breakdown voltage | VBR | Vm | ID=100uA, no illumination | 40 | 60 | |
| Responsivity | Re | A/W | λ=1.55μm,M=1 | 0.9 | ||
| Response time | t | ns | f=1MHz,RL=500 | 1.5 | 3 | |
| Dark Current | ID | nA | M=10 | 25 | 100 | |
| Crosstalk | SL | M=10 | 10% | |||
| Capacitance | C | pF | f=1MHz,M=10 | 12 | 15 | |
| Maximum usable gain | M | V | VBR-1 | 20 | ||
| Temperature coefficient of breakdown voltage | n | v/℃ | -40-+85℃ | 0.1 | 0.15 | |
Absolute Maximum Ratings:
| Operating Temperature | Storage Temperature | Forward Current | Reverse Working Voltage | ESD Sensitivity |
| -50°C to +80°C | -50°C to +85°C | 10mA | 0.99Vbr | ≥ 300V |
Chip dimension and PIN Functions:
Reliability: The product complies with all requirements for product reliability specified in Telcordia GR-468-CORE.